双阱耦合吸收增强中红外量子级联探测器

    Double-well coupled absorption-enhanced mid-infrared quantum cascade detector

    • 量子级联探测器属于光伏型器件,其优势在于可在零偏压下工作、暗电流噪声低,且探测波长灵活可调,尤其在中红外波段的气体传感、自由空间通信和光谱分析等领域具有重要应用。然而,由于QCD的吸收区采用量子阱结构,光与物质相互作用路径较短,导致入射光子难以被充分吸收。此外,光生电子在输运过程中还会因热回填和散射效应产生损耗,进一步限制了器件的响应率。文中报道了一种基于双阱耦合设计增强吸收的中波红外量子级联探测器。通过在吸收区中引入两个相同宽度的耦合量子阱,增加吸收层厚度的同时,增大了基态与激发态之间波函数的重叠积分,从而有效提高了整体吸收效率。计算表明,该双阱耦合结构的吸收系数为1.8%,是单阱吸收结构(0.48%)的3.75倍。采用金属化合物气相沉积技术生长了所设计的结构,制备量子级联探测器器件峰值探测波长为4.9 μm。在77 K温度下,器件的峰值响应率达到16 mA/W,峰值热噪声限探测率为2×1011 Jones。通过改善外延材料质量,器件性能有望获得进一步显著提升。

       

      Abstract:
      Objective Mid-wavelength infrared band covers a key atmospheric window and contains characteristic absorption lines of numerous gas molecules, driving strong demand fortrace gas analysis, target detection, and free-space optical communication. Developing novel mid-infrared detector materials and heterostructures has become a major focus in optoelectronics. The quantum cascade detector (QCD), a photovoltaic device based on intersubband transitions, employs a multi-quantum-well structure. Electrons in the absorbing well are excited from the ground state to an excited state by infrared photons. Subsequently, through a staircase of subband levels formed by coupled quantum wells with energy spacings matching the longitudinal optical phonon energy, photogenerated carriers are directionally transported via LO phonon scattering. Under zero bias, vertical collection of photogenerated carriers is achieved, offering advantages such as zero-bias operation, low dark current noise, and flexible wavelength tunability. However, the low responsivity of QCD devices is mainly limited by two factors. First, the absorption region adopts a quantum-well structure with a small absorption coefficient, making it difficult to fully utilize the incident photons. Second, the multiperiod cascade structure makes the responsivity inversely proportional to the number of periods, requiring the consumption of multiple photons for each electron collected by the external circuit. In addition, thermal backfilling and scattering losses during photogenerated electron transport further reduce the carrier collection efficiency. This work focuses on the issue of low absorption coefficient and reports a mid-infrared QCD structure and device employing a double-well-coupled structure.
      Methods A double-well coupled structure was designed to enable multichannel transitions from a strongly coupled ground state to several near-degenerate excited states, and the corresponding device is fabricated. Theoretical calculations validate the feasibility of this structure. The QCD structure is grown on a InP substrate via metal-organic chemical vapor deposition, and device fabrication is completed using lithography and etching. The photocurrent spectrum is measured using a Fourier-transform infrared spectroscopy system. Responsivity is calibrated with a blackbody radiation source and a lock-in amplifier. Dark current and R0A are characterized by an IV source meter, and the detectivity is subsequently derived.
      Results and Discussions Theoretical calculations indicate that the device achieves an extraction efficiency of 86.5%, a significantly increased transition matrix element, and an absorption intensity of 1.8%, corresponding to a theoretical peak responsivity of 44.6 mA/W. Experimental results show that the fabricated double-well-coupled mid-infrared quantum cascade detector exhibits a peak response wavelength of 4.9 μm and a peak responsivity of 16 mA/W at 77 K (Fig.3). The R0A value is 6×105 Ω·cm2, and the peak Johnson-noise-limited detectivity reaches 2×1011 Jones (Fig.5), which is consistent with the theoretical design values. The discrepancy between the experimental and theoretical results is likely attributable to inferior epitaxial growth quality compared with theoretical predictions.
      Conclusions A double-well-coupled quantum cascade detector with an operating wavelength of 4.9 μm at 77 K was designed. By optimizing the energy level structure, the theoretical responsivity was successfully increased, and the performance improvement was experimentally demonstrated. The detector exhibits high detectivity and responsivity at 77 K, while still maintaining a response at room temperature, indicating that the double-well-coupled structure offers advantages in terms of flexible energy level design and enhanced device performance. In the future, further improvements in epitaxial material quality will be pursued to achieve even higher performance.

       

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